Quantum-confinement and Structural Anisotropy result in Electrically-Tunable Dirac Cone in Few-layer Black Phosphorous

نویسندگان

  • Kapildeb Dolui
  • Su Ying Quek
چکیده

Two-dimensional (2D) materials are well-known to exhibit interesting phenomena due to quantum confinement. Here, we show that quantum confinement, together with structural anisotropy, result in an electric-field-tunable Dirac cone in 2D black phosphorus. Using density functional theory calculations, we find that an electric field, E ext, applied normal to a 2D black phosphorus thin film, can reduce the direct band gap of few-layer black phosphorus, resulting in an insulator-to-metal transition at a critical field, Ec. Increasing E ext beyond Ec can induce a Dirac cone in the system, provided the black phosphorus film is sufficiently thin. The electric field strength can tune the position of the Dirac cone and the Dirac-Fermi velocities, the latter being similar in magnitude to that in graphene. We show that the Dirac cone arises from an anisotropic interaction term between the frontier orbitals that are spatially separated due to the applied field, on different halves of the 2D slab. When this interaction term becomes vanishingly small for thicker films, the Dirac cone can no longer be induced. Spin-orbit coupling can gap out the Dirac cone at certain electric fields; however, a further increase in field strength reduces the spin-orbit-induced gap, eventually resulting in a topological-insulator-to-Dirac-semimetal transition.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Corrigendum: Quantum-confinement and Structural Anisotropy result in Electrically-Tunable Dirac Cone in Few-layer Black Phosphorous

This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the mater...

متن کامل

Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Solution-processed black phosphorus quantum-dot-based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and curre...

متن کامل

Two-dimensional phosphorus carbide: Competition between sp and sp bonding

We propose previously unknown allotropes of phosphorus carbide (PC) in the stable shape of an atomically thin layer. Different stable geometries, which result from the competition between sp bonding found in graphitic C and sp bonding found in black P, may be mapped onto 2D tiling patterns that simplify categorizing of the structures. Depending on the category, we identify 2D-PC structures that...

متن کامل

Structural and optical properties of n- type porous silicon– effect of etching time

Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with etching tim...

متن کامل

Optimization of Thermalisation Loss in the Quantum Dot Solar Cells using a Finite Element Method

As thermalisation loss is the dominant loss process in the quantum dot intermediate band solar cells (QD-IBSCs), it has been investigated and calculated for a QD-IBSC, where IB is created by embedding a stack of InAs(1-x) Nx QDs with a square pyramid shape in the intrinsic layer of the AlPySb(1-y) p-i-n structure. IB, which is an optically coupled but electrically isolated mini-band, divides th...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 5  شماره 

صفحات  -

تاریخ انتشار 2015